View MMFT3055V_120287.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMFT3055V/D
Product Preview
TMOS VTM SOT-223 for Surface Mount
N-Channel Enhancement-Mode Silicon Gate
TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E-FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. New Features of TMOS V * On-resistance Area Product about One-half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology * Faster Switching than E-FET Predecessors Features Common to TMOS V and TMOS E-FETS * Avalanche Energy Specified * IDSS and VDS(on) Specified at Elevated Temperature * Static Parameters are the Same for both TMOS V and TMOS E-FET * Available in 12 mm Tape & Reel Use MMFT3055VT1 to order the 7 inch/1000 unit reel Use MMFT3055VT3 to order the 13 inch/4000 unit reel MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating Drain-to-Source Voltage Drain-to-Gate Voltage (RGS = 1.0 M) Gate-to-Source Voltage - Continuous Gate-to-Source Voltage - Non-repetitive (tp 10 ms) Drain Current - Continuous Drain Current - Continuous @ 100C Drain Current - Single Pulse (tp 10 s) Total PD @ TA = 25C mounted on 1" sq. Drain pad on FR-4 bd material Total PD @ TA = 25C mounted on 0.70" sq. Drain pad on FR-4 bd material Total PD @ TA = 25C mounted on min. Drain pad on FR-4 bd material Derate above 25C Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 3.4 Apk, L = 10 mH, RG = 25 ) Thermal Resistance - Junction to Ambient on 1" sq. Drain pad on FR-4 bd material - Junction to Ambient on 0.70" sq. Drain pad on FR-4 bd material - Junction to Ambient on min. Drain pad on FR-4 bd material Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds
TM
MMFT3055V
TMOS POWER FET 1.7 AMPERES 60 VOLTS RDS(on) = 0.130 OHM
D 4 G S CASE 318E-04, Style 3 TO-261AA 1 2 3
Symbol VDSS VDGR VGS VGSM ID ID IDM PD
Value 60 60 20 25 1.7 1.4 6.0 2.0 1.7 0.9 6.3 - 55 to 175 58
Unit Vdc Vdc Vdc Vpk Adc Apk Watts
mW/C C mJ C/W
TJ, Tstg EAS
RJA RJA RJA TL
70 88 159 260 C
This document contains information on a new product. Specifications and information herein are subject to change without notice. E-FET and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
(c) Motorola TMOS Motorola, Inc. 1996
Power MOSFET Transistor Device Data
1
MMFT3055V
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150C) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (VGS = 10 Vdc, ID = 0.85 Adc) Drain-to-Source On-Voltage (VGS = 10 Vdc, ID = 1.7 Adc) (VGS = 10 Vdc, ID = 0.85 Adc, TJ = 150C) Forward Transconductance (VDS = 8.0 Vdc, ID = 1.7 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (VDS = 48 Vdc, ID = 1.7 Adc, VGS = 10 Vdc) (VDD = 30 Vdc, ID = 1.7 Adc, VGS = 10 Vdc, RG = 9.1 ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (1) (IS = 1.7 Adc, VGS = 0 Vdc) (IS = 1.7 Adc, VGS = 0 Vdc, TJ = 150C) VSD -- -- trr (IS = 1.7 Adc, VGS = 0 Vdc, dIS/dt = 100 A/s) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25 from package to center of die) Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. LD -- LS -- 7.5 -- 4.5 -- nH nH ta tb QRR -- -- -- -- 0.85 0.7 40 34 6.0 0.089 1.6 -- -- -- -- -- C ns Vdc -- -- -- -- -- -- -- -- 8.0 9.0 32 18 13 2.0 5.0 4.0 20 20 60 40 20 -- -- -- nC ns (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss Coss Crss -- -- -- 360 110 25 500 150 50 pF VGS(th) 2.0 -- RDS(on) VDS(on) -- -- gFS 1.0 -- -- 2.7 0.27 0.25 -- mhos -- 2.8 5.6 0.115 4.0 -- 0.13 Vdc mV/C Ohm Vdc V(BR)DSS 60 -- IDSS -- -- IGSS -- -- -- -- 10 100 100 nAdc -- 63 -- -- Vdc mV/C Adc Symbol Min Typ Max Unit
Reverse Recovery Time
2
Motorola TMOS Power MOSFET Transistor Device Data
MMFT3055V
PACKAGE DIMENSIONS
A F
4
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.
S
1 2 3
B
D L G J C 0.08 (0003) H M K
INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0_ 10 _ S 0.264 0.287 STYLE 3: PIN 1. 2. 3. 4.
MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0_ 10 _ 6.70 7.30
GATE DRAIN SOURCE DRAIN
CASE 318E-04 ISSUE H
Motorola TMOS Power MOSFET Transistor Device Data
3
MMFT3055V
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com
JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298
4
Motorola TMOS Power MOSFET Transistor Device Data MMFT3055V/D
*MMFT3055V/D*

▲Up To Search▲

Price & Availability of MMFT3055V

	To Download MMFT3055V Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .